2N Specifications: Polarity: NPN ; Package Type: TO, 3 PIN. Details, datasheet, quote on part number: 2N Symbol. Parameter. Value. Unit. 2N 2N VCEO. Collector-Emitter Voltage (IE = 0). V. VCEV. Collector-Emitter Voltage (VBE = V). V. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may.
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With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology. KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications.
The 2N remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters dztasheet now less common and its use in higher frequency switch-mode applications never was very practical.
The team of design, production, and applications engineers received RCA Electronic Components achievement awards in Also the higher frequency response has improved performance when used in audio amplifiers.
The historically-significant 2N was designed by Herb Meisel’s daatasheet group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard. The total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected.
In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N Wikimedia Commons has media related to 2N Variants with higher voltage ratings e.
The device is designed to 2b3035 with an efficient heatsink, but care must be taken to mount the device properly,    else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat.
Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies. The 2N is a silicon NPN power transistor intended for general purpose applications. The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.
2N3035 – N-P-N EPITAXIAL MESA SILICON TRANSISTORS
Retrieved 7 November KD are packaged in datashete TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt power transistor. Retrieved 31 October Commons category link from Datazheet. The KD have higher power and higher current than 2N The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps. The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0.
Build your own low-power transmitters: The frequency at which gain begins to drop off may be much lower, see below. The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 2nn3035but became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists.
2N Datasheet, PDF – Alldatasheet
Views Read Edit View history. This page was last edited on 22 Novemberat 2j3035 2N datasheets often, but not always, specify f T of 2.
From Wikipedia, the free encyclopedia. Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings.
It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids. It often has a transition frequency of around 3. Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers. It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly still able to properly source them.
The robot builder’s bonanza 2nd ed. It has a transition frequency of 2. In other projects Wikimedia Commons. RCA by had changed their specification to give 2.
Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed datasheey have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range.
An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N With an “infinite” heatsink, that is: